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| Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150s Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150s Pulse, 10% Duty Features * * * * * * * * NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing 1 Description M/A-COM's PH1214-80M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-80M can produce 80 watts of output power with medium pulse length (150 S) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Dissued emitter ballast resistors and gold metalization assure ruggedness and long-term reliability. In addition to L-band pulsed radars, this high performance power transistor can also be used in pulsed digital communications systems. Notes: (unless otherwise specified) 1. Tolerances are: inches .005" (millimeters 0.13mm) Broadband Test Fixture Impedance F (GHz) 1.20 1.30 1.40 TEST FIXTURE INPUT CIRCUIT Z IF () 9.4 - j4.5 8.3 - j2.8 7.9 - j1.3 Z OF () 7.0 - j2.8 4.5 - j3.2 3.0 - j2.1 TEST FIXTURE OUTPUT CIRCUIT Absolute Maximum Rating at 25C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 70 3.0 6.4 185 -65 to +200 200 Units V V A W C C 50 ZIF ZOF 50 Electrical Specifications at 25C Symbol BVCES ICES RTH(JC) PO GP RL VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Collector-Emitter Breakdown Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 35 mA VCE = 40 V VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz Min 70 80 7.5 50 9 Max 3.5 0.80 3:1 1.5:1 Units V mA C/W W dB % dB V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150s Pulse, 10% Duty PH1214-80M Test Fixture Electrical Schematic Top View 1 Electrical Schematic Parts List C1, C2 C3 Q1 Board Type 100 pF ATC size A 50 uF 50 Volts PH1214-80M Rogers 6010.5 .025" Thick, ER = 10.5 Note: 1. Dimensions are in mils. V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. |
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